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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PML package High speed High breakdown voltage High reliability Built in damper diode APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output. PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SD1880 Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 800 6 8 30 70 150 -55~150 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature Open collector Emitter UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1880 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=100mA ;IB=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=800V ;IE=0 VEB=4V ;IC=0 VCE=1500V IC=1A ; VCE=5V IC=6A ; VCE=5V 8 5 10 2 40 MIN 800 5 1.5 10 130 1.0 |I TYP. MAX UNIT V V V A mA mA SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO ICES hFE-1 hFE-2 VF tf TOR NDU ICO E SEM ANG INCH Diode forward voltage Fall time IEC=8A IC=6A;RL=33.3| IB1=1.2A IB2=-2.4A;VCC=200V 0.1 0.3 |I V s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1880 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1880 TOR NDU ICO E SEM ANG INCH 4 |
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